Light-ion beam for microelectronic applications
Idioma
en
Article de revue
Este ítem está publicado en
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research B, Nuclear Instruments and Methods in Physics Research B, 2004-09-20, Paris. 2005, vol. 240, p. 265-270
Elsevier
Resumen en inglés
In this paper we describe the structure and the composition of (Al,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue ($\lambda$ = 450 nm) resonant ...Leer más >
In this paper we describe the structure and the composition of (Al,Ga)N/GaN Bragg reflectors obtained from Rutherford backscattering spectroscopy. Bragg reflectors constitute a part of blue ($\lambda$ = 450 nm) resonant cavity light emitting diodes. To improve the measurement accuracy, three tilt angles have been used (10\degres, 25\degres and 50\degres). In a second part of the paper, ion beam induced charges study has been carried out, with a 2 MeV $^4$He$^+$ micro-beam, on metal–semiconductor–metal UV photodetectors. Results have been taken into account for the design of the photodetector electrodes.< Leer menos
Palabras clave en inglés
RBs
IBIC
ALGaN
UV detectors
Bragg reflectors
Orígen
Importado de HalCentros de investigación