A 23-24 GHz low power frequency synthesizer in 0.25 μm SiGe
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | MAZOUFFRE, O. | |
| dc.contributor.author | LAPOUYADE, H. | |
| dc.contributor.author | BEGUERET, J.B. | |
| dc.contributor.author | CATHELIN, A. | |
| dc.contributor.author | BELOT, D. | |
| hal.structure.identifier | Centre d'Etudes Nucléaires de Bordeaux Gradignan [CENBG] | |
| dc.contributor.author | HELLMUTH, P. | |
| hal.structure.identifier | Laboratoire de l'intégration, du matériau au système [IMS] | |
| dc.contributor.author | DEVAL, Y. | |
| dc.date.issued | 2005-10-03 | |
| dc.date.conference | 2005-10-03 | |
| dc.description.abstractEn | This paper presents the design and the experimental measurements of a 24 GHz fully integrated fractional PLL, for ISM band, with a new low power prescaler. This circuit is implemented in a 0.25 mu m SiGe:C process from STMicroelectronics (BiCMOS7RF). The PLL power dissipation is 170 mW and fulfills a 23.7 to 24.9 GHz frequency locking range, while exhibiting a phase noise of -100 dBc/Hz at 100 KHz from the carrier. The simulated PLL unity-gain bandwidth is 36 MHz, with a phase margin of 54 degrees. The PLL uses a new latch-based prescaler (SRO) which exhibits a power dissipation of 0.68 GHz/mW | |
| dc.language.iso | en | |
| dc.source.title | European Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005 | |
| dc.title.en | A 23-24 GHz low power frequency synthesizer in 0.25 μm SiGe | |
| dc.type | Communication dans un congrès | |
| dc.subject.hal | Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique | |
| bordeaux.page | 533-536 | |
| bordeaux.country | FR | |
| bordeaux.title.proceeding | European Gallium Arsenide and Other Semiconductor Application Symposium, 2005. EGAAS 2005 | |
| bordeaux.conference.city | Paris | |
| bordeaux.peerReviewed | oui | |
| hal.identifier | in2p3-00370534 | |
| hal.version | 1 | |
| hal.invited | non | |
| hal.proceedings | oui | |
| hal.conference.end | 2005-10-04 | |
| hal.popular | non | |
| hal.audience | Internationale | |
| hal.origin.link | https://hal.archives-ouvertes.fr//in2p3-00370534v1 | |
| bordeaux.COinS | ctx_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.btitle=European%20Gallium%20Arsenide%20and%20Other%20Semiconductor%20Application%20Symposium,%202005.%20EGAAS%202005&rft.date=2005-10-03&rft.spage=533-536&rft.epage=533-536&rft.au=MAZOUFFRE,%20O.&LAPOUYADE,%20H.&BEGUERET,%20J.B.&CATHELIN,%20A.&BELOT,%20D.&rft.genre=unknown |
Files in this item
| Files | Size | Format | View |
|---|---|---|---|
|
There are no files associated with this item. |
|||