Synthesis and optimization of low-pressure chemical vapor deposition-silicon nitride coatings deposited from SiHCl3 and NH3
JACQUES, Sylvain
Laboratoire des Composites Thermostructuraux [LCTS]
Centre National de la Recherche Scientifique [CNRS]
Leer más >
Laboratoire des Composites Thermostructuraux [LCTS]
Centre National de la Recherche Scientifique [CNRS]
JACQUES, Sylvain
Laboratoire des Composites Thermostructuraux [LCTS]
Centre National de la Recherche Scientifique [CNRS]
< Leer menos
Laboratoire des Composites Thermostructuraux [LCTS]
Centre National de la Recherche Scientifique [CNRS]
Idioma
EN
Article de revue
Este ítem está publicado en
Thin Solid Films. 2019-07-01, vol. 681, p. 47-57
Resumen en inglés
Stoichiometric silicon nitride films were deposited by low-pressure chemical vapor deposition from the SiHCl3-NH3-H2-Ar system in a hot wall reactor at pressures ranging from 0.3 to 2 kPa. The films are amorphous for ...Leer más >
Stoichiometric silicon nitride films were deposited by low-pressure chemical vapor deposition from the SiHCl3-NH3-H2-Ar system in a hot wall reactor at pressures ranging from 0.3 to 2 kPa. The films are amorphous for deposition temperatures up to 1000 °C and crystalline, in the α-form, at 1200 °C and above. A method for evaluating the internal stresses based on the curvature of the silicon substrate wafer and the resulting silicon Raman peak shift was developed. Some amorphous films exhibit high internal tensile stresses that can lead to cracking during deposition depending on the mechanism and effective precursors involved. Residual stresses can thus be reduced and cracking avoided by, in descending order of importance, reducing the concentration of reactive gases through dilution, increasing the deposition temperature and decreasing the total pressure. The effects of these parameters on the intrinsic stresses were related to the amount of residual hydrogen successively incorporated and thermally released during the growth of the coating according to the Noskov's model.< Leer menos
Link to research data
Centros de investigación