https://oskar-bordeaux.fr:443 The DSpace digital repository system captures, stores, indexes, preserves, and distributes digital research material. 2026-04-11T02:30:22Z https://oskar-bordeaux.fr/handle/20.500.12278/171701 BOUNY, Pierre; ARSAC, Laurent; PRATVIEL, Yvan; BOFFET, Alexis; TOURE CUQ, Emma; DESCHODT-ARSAC, Veronique 2022-06-17T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/199538 BOFFET, Alexis; DESCHODT-ARSAC, Veronique; GRIVEL, Eric 2024-01-01T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/199521 TRAN, Yen; NOMURA, Toshihiro; CHERCHALI, Mohamed Salim; TASSIN, Claire; DEVAL, Yann; MANEUX, Cristell We investigated the significance of 0.18um CMOS (Complementary Metal-Oxide-Semiconductor) degradation due to bias temperature instability (BTI) under extreme temperature operations (150 degC and 210 degC). The transistors have been applied dedicated DC bias and temperature conditions to investigate the wear-out mechanism in specific severe environment for oilfield applications. The aging tests have been monitored up to 1,000 hours. These results are preliminarily used to develop equations reflecting aging laws to be included in commercial software tool for further investigation at logic circuit level. 2021-07-01T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/199537 ASPRILLA, Andres; CATHELIN, Andreia; DEVAL, Yann This paper presents the design and measurement results of an sub-half-mW frequency synthesizer, composed of a multiplying delay-locked loop (MDLL), which reduces the phase noise of a standard ring oscillator. The proposed circuit takes advantage of the low-jitter and high loop bandwidth characteristic of the MDLLs, and has the particular feature of being able to lock to any external reference frequency between 50 and 100 MHz. It is known from the previous state-of-theart implementations that the reference spur degrades the output spectrum. In this work, an ultra-low-power spur reduction circuit is proposed to improve the spectral purity of the output spectrum, achieving -47.2dBc of spur rejection, measured for 10 chips. For 456 μW of power consumption, 2.5 ps of RMS jitter, the proposed solution presents a Figure of merit (FoM) of -235dB, being suitable for ultra-low-power IoT applications. 2023-09-11T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/199518 DUMONT, Romane; DE MATOS, Magali; CATHELIN, Andreia; DEVAL, Yann A low-phase-noise mm-W low-power quadrature differentially injection-locked digitally-controlled oscillator (QILDCO) is presented. This work adopts a differential injection to enable a trade-off between phase noise performance and power consumption. Switched-capacitor banks and active devices are integrated inside the inductor loop to reduce the active area. The total active area is 0.109 mm 2 including harmonic extractors and buffers (excluding I/O pads). The proposed oscillator is supporting two 5G mm-W bands below 30 GHz with a tuning range of 21.3%. The prototype has been implemented in 65-nm Partially-Depleted SOI (PD-SOI) CMOS process. It achieves best state-of-the-art jitter of 25.6 fs while consuming 22 mW from a 1 V supply voltage. 2022-06-19T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/199520 TRAN, Yen; NOMURA, Toshihiro; CHERCHALI, Mohamed Salim; TASSIN, Claire; DEVAL, Yann; MANEUX, Cristell Bias temperature instability (BTI) and hot carrier injection (HCI) are both prominent reliability concerns for integrated circuits (ICs). In this paper, we investigated these failure mechanisms on 0.18μm CMOS (Complementary Metal-Oxide-Semiconductor) submitted to severe temperatures (150°C and 210°C) for long period of stress (up to 2,000 hours). Additionally, the transistors were applied dedicated stress conditions to activate the intrinsic HCI and BTI wear-out mechanisms. The aging laws were proposed based on these experimental results and implemented into the commercial software tool for further investigation at logic circuit level. 2022-01-11T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/199519 ASPRILLA, Andres; CATHELIN, Andreia; DEVAL, Yann This paper presents the design of a linear wide output range voltage-to-current (V2I) converter which has a constant transconductance value from a given input voltage. The proposed circuit offers a solution with a low footprint (33 μm x 24 μm) , low power consumption (34 μW) , and a transconductance variation less than 2%. In this paper, the output current is used to generate a pair of symmetrical voltages, equal in magnitude and opposite in sign, to provide the tuning of a body-controlled ring oscillator. The circuit has been designed and fabricated in 28 nm FD-SOI technology from STMicroelectronics. 2022-03-01T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/199526 From modeling and simulation to Digital Twin: evolution or revolution? ALI, Zeeshan; BIGLARI, Raheleh; DENIL, Joachim; MERTENS, Joost; POURSOLTAN, Milad; TRAORE, Mamadou Kaba As digitalization is permeating all sectors of society toward the concept of ‘‘smart everything,’’ and virtual technologies and data are gaining a dominant place in the engineering and control of intelligent systems, the Digital Twin (DT) concept has surfaced as one of the top technologies to adopt. This paper discusses the DT concept from the viewpoint of Modeling and Simulation (M&S) experts. It both provides literature review elements and adopts a commentary-driven approach. We first examine the DT from a historical perspective, tracing the historical development of M&S from its roots in computational experiments to its applications in various fields and the birth of DT-related and allied concepts. We then approach DTs as an evolution of M&S, acknowledging the overlap in these different concepts. We also look at the M&S workflow and its evolution toward a DT workflow from a software engineering perspective, highlighting signifi cant changes. Finally, we look at new challenges and requirements DTs entail, potentially leading to a revolutionary shift in M&S practices. In this way, we hope to foster the discussion on DTs and provide the M&S expert with innovative perspectives. 2024-03-20T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/183726 Le cadre de l’expérience des données en éducation : gouvernance, représentations et intelligibilité des données dans l’éducation nationale LEHMANS, Anne; CAPELLE, Camille Analyse de la façon dont les acteurs de l'éducation nationale et leurs partenaires comprennent les enjeux d’organisation, de protection, de mobilisation et de médiation des données. Sur la base des premiers résultats d’une recherche sur la culture des données, les représentations montrent les difficultés auxquelles se heurtent les acteurs face à leurs missions dans le cadre de la gouvernance des données. En cause, leur intelligibilité des données, dans la mesure où celles-ci renvoient à des objets complexes, à des normes qui sont encore en construction dans leur mise en oeuvre, et à des valeurs qui révèlent les contradictions des choix politiques en matière de gestion des données pour l’éducation. https://oskar-bordeaux.fr/handle/20.500.12278/197376 Étude de l’effet de l’humidité sur les performances d’une antenne patch en substrat bois éco-responsable BOURRETERE, Clement; MARTINS, Valentin Lourenço; GHIOTTO, Anthony; DELETAGE, Jean-Yves https://oskar-bordeaux.fr/handle/20.500.12278/167928 POUGET, V.; CALIN, T.; LAPUYADE, H.; LEWIS, D.; FOUILLAT, P.; VELAZCO, Raoul; MAIDON, Y.; SARGER, L. https://oskar-bordeaux.fr/handle/20.500.12278/194978 BOURRETERE, Clément; MARTINS, Valentin Lourenço; GHIOTTO, Anthony; DELETAGE, Jean-Yves https://oskar-bordeaux.fr/handle/20.500.12278/197374 BRENDLER, Leonardo H.; LAPUYADE, Herve; DEVAL, Yann; REIS, Ricardo; RIVET, Francois A new era of space exploration is emerging, characterized by a rapid surge in satellites and significant cost reductions. Memory circuits play a vital role in space applications, and it is essential to develop techniques to address the radiation-induced upsets in these circuits. This work extends a previously presented method to detect Multiple-Cell Upsets (MCU) in SRAMs for space applications. The method involves spatially interleaving an SRAM array with a network of radiation detectors. Considering the relationship between the radiation-hardening level and the area penalty added by the detection cells, a tool for automatically generating the SRAM layout with different configurations was developed and is presented in this work. The developed tool facilitates using the new method in commercial applications, providing different levels of protection according to the environment in which the circuit will be exposed. 2023-12-04T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/194984 TRAN, Yen; NOMURA, Toshihiro; CHERCHALI, Mohamed Salim; TASSIN, Claire; DEVAL, Yann; MANEUX, Cristell We investigated the degradation due to bias temperature instability (BTI) and hot carrier injection (HCI) for 0.18micrometer CMOS (Complementary Metal-Oxide- Semiconductor) under extreme temperature operations (150 deg C and 210 deg C). The transistors have been applied dedicated DC bias and temperature conditions to investigate each intrinsic wear-out mechanism in specific severe environment for oilfield applications. The aging tests have been monitored for up to 1,000 hours. These results are preliminarily used to develop equations reflecting aging laws to be included in commercial software tool for further investigation at logic circuit level. 2021-09-27T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/97574 DESCHANS, D.; BÉGUERET, J.-B.; DEVAL, Y.; SCARABELLO, C.; FOUILLAT, P.; MONTIGNAC, G.; BAUDRY, Alain 2006-01-01T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/188982 Un convertisseur radiofréquence large-bande utilisant la transformée de Walsh pour application 5G et au delà FERRER, Pierre; RIVET, Francois; LAPUYADE, Herve; DEVAL, Yann https://oskar-bordeaux.fr/handle/20.500.12278/188983 Une méthode LMS par blocs utilisant la transformée de Walsh pour de la prédistorsion numérique d'amplificateur de puissance FELLMANN, Maxandre; RIVET, Francois; KERHERVE, Eric; DEVAL, Yann; DELTIMPLE, Nathalie https://oskar-bordeaux.fr/handle/20.500.12278/189124 DUMONT, Romane; MATOS, Magali De; CATHELIN, Andreia; DEVAL, Yann A low-phase-noise injection-locked oscillator (ILO) based on a cross-coupled oscillator topology is presented. The prototype ILO was designed and fabricated in a 65-nm Partially Depleted SOI (PD-SOI) CMOS technology from STMicroelectronics. The 27.47 GHz free-running oscillator exhibits a phase noise of -119.23 dBc/Hz at 10-MHz offset, and its robustness to process variations is less than 4 dB. Using a common mode injection, the proposed ILO generates an output frequency at 27.5-GHz when the oscillator is injection-locked by the 5th harmonic of a 5.5 GHz reference. In injection-locked mode, the phase noise performance is then -116.75 dBc/Hz and - 135 dBc/Hz at 1-MHz and 10-MHz offsets, respectively, while solely consuming 2.06 mW from a 1 V supply. The total active area is 0.031 mm 2 (excluding I/O pads). 2021-06-13T00:00:00Z https://oskar-bordeaux.fr/handle/20.500.12278/189125 DEVAL, Yann https://oskar-bordeaux.fr/handle/20.500.12278/140606 DONDON, P.-H.; BULUCEA, C. A. 2022-02-09T00:00:00Z